IRFB4332PBF International Rectifier, IRFB4332PBF Datasheet - Page 6

• Manufacturer Part Number: IRFB4332PBF
• Description: MOSFET N-CH 250V 60A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4332PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 33 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 5860pF @ 25V
• Power - Max: 390W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 60 A
• Power Dissipation: 390 W
• Mounting Style: Through Hole
• Gate Charge Qg: 99 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRFB4332PbF
6
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Fig 19a. Unclamped Inductive Test Circuit
Fig 20a. Gate Charge Test Circuit
‚
+
-
12V
V
GS
D.U.T
R G
Same Type as D.U.T.
20V
V
V DS
GS
Current Regulator
.2μF
Fig 18.
t p
50KΩ
3mA
ƒ
+
-
Current Sampling Resistors
•
•
•
•
I AS
D.U.T
.3μF
SD
0.01 Ω
L
I
G
•
•
•
D.U.T.
I
D
-
15V
„
G
DRIVER
+
-
V
+
DS
+
-
V DD
A
+
-
Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 19b. Unclamped Inductive Waveforms
P.W.
SD
for HEXFET
DS
Waveform
Waveform
I
Fig 20b. Gate Charge Waveform
AS
Vgs(th)
Qgs1 Qgs2
Vds
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
Diode Recovery
Current
®
dv/dt
Power MOSFETs
Forward Drop
Qgd
di/dt
t p
D =
Qgodr
Period
P.W.
V
(BR)DSS
V
V
I
SD
GS
DD
www.irf.com
=10V
Vgs
Id