STF23NM60N STMicroelectronics, STF23NM60N Datasheet - Page 5
STF23NM60N
Manufacturer Part Number
STF23NM60N
Description
MOSFET N-CH 600V 19A TO-220FP
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB23NM60N.pdf
(19 pages)
Specifications of STF23NM60N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
180 mOhm @ 9.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
19A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
2050pF @ 50V
Power - Max
35W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
9.5A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
150mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STF23NM60N
Manufacturer:
TI
Quantity:
1 845
Part Number:
STF23NM60N
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STF23NM60N,STP23NM60N,F23NM60N,P23NM60N,
Manufacturer:
ST
0
Company:
Part Number:
STF23NM60ND
Manufacturer:
ST
Quantity:
20 000
STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
2
Electrical characteristics
(T
Table 5.
1.
Table 6.
1.
2. C
C
V
Symbol
Symbol
R
dv/dt
CASE
V
oss eq.
(BR)DSS
g
C
I
I
increases from 0 to 80% V
DS(on)
C
C
GS(th)
Q
Q
Characteristic value at turn off on inductive load
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DSS
GSS
Rg
Q
fs
oss
oss eq.
rss
iss
gs
gd
(1)
g
(1)
=25°C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Drain-source voltage slope
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
V
V
V
V
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
V
V
(see Figure 19)
I
V
V
V
V
V
V
V
D
GS
GS
GS
DS
DS
DD
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
= V
= 10 V, I
=15 V, I
= 50 V, f =1 MHz,
= 0
= 0, V
= 480 V, I
= 10 V
= Max rating,
= ±20 V
= 480 V, I
= 10 V
= Max rating,@125 °C
Test conditions
Test conditions
GS
, I
DS
D
D
GS
D
= 0 to 480 V
= 9.5 A
= 250 µA
D
D
= 9.5 A
= 0
= 19 A
= 19 A,
Min.
Min.
Electrical characteristics
600
2
0.150 0.180
2050
Typ.
Typ.
140
260
17
60
10
30
30
8
4
3
oss
Max.
Max.
100
100
when V
1
4
DS
Unit
V/ns
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
pF
S
Ω
V
V
Ω
5/19