STF23NM60N STMicroelectronics, STF23NM60N Datasheet - Page 9
STF23NM60N
Manufacturer Part Number
STF23NM60N
Description
MOSFET N-CH 600V 19A TO-220FP
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB23NM60N.pdf
(19 pages)
Specifications of STF23NM60N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
180 mOhm @ 9.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
19A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
2050pF @ 50V
Power - Max
35W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
9.5A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
150mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STF23NM60N
Manufacturer:
TI
Quantity:
1 845
Part Number:
STF23NM60N
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STF23NM60N,STP23NM60N,F23NM60N,P23NM60N,
Manufacturer:
ST
0
Company:
Part Number:
STF23NM60ND
Manufacturer:
ST
Quantity:
20 000
STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
vs temperature
characteristics
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
temperature
Electrical characteristics
VDSS
vs temperature
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