STP13NM60N STMicroelectronics, STP13NM60N Datasheet - Page 16

• Manufacturer Part Number: STP13NM60N
• Description: MOSFET N-CH 600V 11A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP13NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 790pF @ 50V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.28ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.36 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 11 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8787-5

Package mechanical data
16/21
Dim.
ø
A
ø
b
b
L
L
D
A
E
S
b
c
e
L
P
R
1
2
1
2
1
1
1
1
Min.
4
2
0
3
3
4
1
2
3
9
5
4
8 .
2 .
4 .
7 .
5 .
5 .
0 .
0 .
0 .
8 .
4 .
2 .
5
0
0
0
5
0
5
5
0
Doc ID 15420 Rev 3
TO-247 Mechanical data
1
mm.
5
5
Typ
8
4 .
5 .
5 .
5
0
0
STB/D/F/I/P/W13NM60N
2
1
1
Max.
2
4
5
1
2
3
0
3
5
0
5
4
1 .
6 .
4 .
4 .
4 .
8 .
3 .
6 .
5 .
1 .
7 .
8 .
5
0
0
0
0
0
0
5
0
5
5
0