STP13NM60N STMicroelectronics, STP13NM60N Datasheet - Page 9

• Manufacturer Part Number: STP13NM60N
• Description: MOSFET N-CH 600V 11A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP13NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 790pF @ 50V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.28ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.36 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 11 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8787-5

STB/D/F/I/P/W13NM60N
Figure 14. Gate charge vs gate-source voltage Figure 15. Capacitance variations
Figure 16. Normalized gate threshold voltage
(norm)
V
GS(th)
1.00
0.80
1.10
0.70
0.90
-50
vs temperature
-25
0
25
50
I
D
=250µA
75
100
T
J
(°C)
Doc ID 15420 Rev 3
AM03306v1
Figure 17. Normalized on resistance vs
R
DS(on)
(norm)
1.9
0.5
2.1
1.7
1.5
1.3
1.1
0.9
0.7
-50
temperature
-25
V
I
D
GS
0
=5.5A
=10V
25
Electrical characteristics
50
75
100
T
J
(°C)
AM03307v1
9/21