STB32N65M5 STMicroelectronics, STB32N65M5 Datasheet - Page 13

• Manufacturer Part Number: STB32N65M5
• Description: MOSFET N-CH 650V 24A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB32N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 119 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 3320pF @ 100V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.119 Ohm
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 15 A, 24 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 72 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10564-2

STB/F/I/P/W32N65M5
Dim.
øP
øR
A1
b1
b2
L1
L2
A
D
E
S
b
e
L
c
19.85
15.45
14.20
Min.
4.85
2.20
0.40
3.70
3.55
4.50
1.0
2.0
3.0
Doc ID 15316 Rev 3
TO-247 Mechanical data
18.50
mm.
5.45
5.50
Typ
Package mechanical data
20.15
15.75
14.80
Max.
5.15
2.60
1.40
2.40
3.40
0.80
4.30
3.65
5.50
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