STY130NF20D STMicroelectronics, STY130NF20D Datasheet - Page 3

• Manufacturer Part Number: STY130NF20D
• Description: MOSFET N-CH 200V 130A MAX247
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STY130NF20D

• Package / Case: MAX247™
• Mounting Type: Through Hole
• Power - Max: 450W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 338nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 130A
• Drain To Source Voltage (vdss): 200V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 65A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 mOhms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 130 A
• Power Dissipation: 450 W
• Gate Charge Qg: 338 nC
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STY130NF20D
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area
2. Pulse width limited by Tjmax
3. Strating Tj = 25 °C, I
4. I
Table 3.
Symbol
P
Symbol
R
dv/dt
R
I
SD
TOT
DM
V
thj-case
E
T
thj-amb
I
T
I
I
AR
T
GS
AS
stg
D
D
J
(1)
L
(4)
≤ 130 A, di/dt ≤ 1000 A/µs, peak V
(1)
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Avalanche current, repetitive or not repetitive
Single pulse avalanche energy
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
Absolute maximum ratings
Thermal resistance
Thermal resistance junction-case
Thermal resistance junction-ambient
Maximum lead temperature for soldering purpose
D
= I
AR
, V
DD
= 50 V
Doc ID 15300 Rev 3
C
Parameter
= 25 °C
Parameter
DS
≤ V
C
C
(3)
=100 °C
= 25 °C
(BR)DSS
(2)
- 55 to 150
Value
Value
± 20
0.28
130
520
450
130
800
300
82
25
30
Electrical ratings
°C/W
°C/W
Unit
V/ns
Unit
mJ
°C
W
°C
V
A
A
A
A
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