STY130NF20D STMicroelectronics, STY130NF20D Datasheet - Page 5

• Manufacturer Part Number: STY130NF20D
• Description: MOSFET N-CH 200V 130A MAX247
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STY130NF20D

• Package / Case: MAX247™
• Mounting Type: Through Hole
• Power - Max: 450W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 338nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 130A
• Drain To Source Voltage (vdss): 200V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 65A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 mOhms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 130 A
• Power Dissipation: 450 W
• Gate Charge Qg: 338 nC
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STY130NF20D
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
d(on)
d(off)
RRM
RRM
I
SD
Q
Q
t
SD
t
t
t
r
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 15300 Rev 3
V
R
(see
I
I
di/dt = 100 A/µs,
V
I
di/dt = 100 A/µs,
V
DD
SD
SD
SD
G
DD
DD
= 4.7 Ω, V
Test conditions
Test conditions
= 130 A, V
= 130 A,
= 130 A,
= 100 V, I
Figure
= 100 V
= 100 V, Tj=150 °C
15)
GS
D
GS
= 65 A,
=10 V
=0
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ.
190
257
232
218
283
250
1.4
2.4
14
18
Max.
Max.
130
520
1.6
-
Unit
Unit
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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