STW77N65M5 STMicroelectronics, STW77N65M5 Datasheet - Page 9

• Manufacturer Part Number: STW77N65M5
• Description: MOSFET N-CH 650V 69A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW77N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 38 mOhm @ 34.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 69A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 9800pF @ 100V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 69 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Gate Charge Qg: 200 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10589-5; STW77N65M5

STW77N65M5
3
Figure 15. Switching times test circuit for
Figure 17. Test circuit for inductive load
Figure 19. Unclamped inductive waveform
25 Ω
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Test circuits
resistive load
switching and diode recovery times
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FAST
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DM
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L=100µH
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2200
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(BR)DSS
3.3
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3.3
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Doc ID 15322 Rev 3
1000
µF
AM01468v1
AM01472v1
AM01470v1
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DD
V
DD
V
DD
Figure 16. Gate charge test circuit
Figure 18. Unclamped inductive load test
Figure 20. Switching time waveform
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2200
µF
1kΩ
GMAX
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2.7kΩ
12V
=CONST
47kΩ
L
D.U.T.
47kΩ
100Ω
2200
µF
100nF
Test circuits
3.3
µF
D.U.T.
AM01469v1
AM01471v1
1kΩ
V
V
V
9/14
G
DD
DD