TPCA8006-H(TE12LQM Toshiba, TPCA8006-H(TE12LQM Datasheet - Page 3

MOSFET N-CH 100V 18A SOP-8 ADV

TPCA8006-H(TE12LQM

Manufacturer Part Number
TPCA8006-H(TE12LQM
Description
MOSFET N-CH 100V 18A SOP-8 ADV
Manufacturer
Toshiba
Datasheet

Specifications of TPCA8006-H(TE12LQM

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
67 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
780pF @ 10V
Power - Max
45W
Mounting Type
Surface Mount
Package / Case
2-5Q1A
Transistor Polarity
N Channel
Continuous Drain Current Id
45A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
67mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.067 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Power Dissipation
45 W
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse
(Ta = 25°C)
V
R
Symbol
Symbol
(BR) DSS
DS (ON)
V
Q
Q
I
I
C
I
|Y
C
C
Q
GSS
DRP
DSS
V
t
t
Q
DSF
oss
on
off
gs1
SW
rss
t
t
iss
gd
th
fs
r
f
g
|
V
V
I
V
V
V
V
Duty < = 1%, t
V
I
D
DR
V
GS
DS
DS
GS
DS
DS
DD
= 10 mA, V
GS
3
(Ta = 25°C)
= 18 A, V
= 100 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±20 V, V
= 10 V, I
∼ − 80 V, V
10 V
0 V
Test Condition
Test Condition
w
D
D
D
GS
GS
GS
GS
= 10 µs
GS
= 1 mA
= 9 A
DS
= 9 A
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 0 V
= 0 V
I
D
V
= 9 A
DD
∼ − 50 V
D
= 18 A
V
OUT
Min
100
Min
3.0
7.5
Typ.
Typ.
780
390
5.6
4.0
6.9
41
15
17
13
13
12
TPCA8006-H
3
2
2006-11-20
±100
Max
Max
−1.7
100
5.0
67
36
Unit
Unit
mΩ
nA
µA
pF
nC
ns
V
V
S
A
V

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