TPCA8006-H(TE12LQM Toshiba, TPCA8006-H(TE12LQM Datasheet - Page 5

• Manufacturer Part Number: TPCA8006-H(TE12LQM
• Description: MOSFET N-CH 100V 18A SOP-8 ADV
• Manufacturer: Toshiba

Specifications of TPCA8006-H(TE12LQM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 67 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 780pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: 2-5Q1A
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 45A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 67mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.067 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 45 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
0.08
0.06
0.04
0.02
100
100
0.1
80
60
40
20
10
0
1
0
−80
0.1
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
−40
Drain-source voltage V
Total gate charge Q
Ambient temperature Ta (°C)
4
V DS
Dynamic input/output
Capacitance – V
0
1
characteristics
R
V GS
DS (ON)
8
V DD = 80 V
40
I D = 18 A
− Ta
12
80
g
10
DS
Common source
I D = 18 A
Ta = 25°C
Pulse test
DS
(nC)
9
16
120
(V)
4.5
C iss
C oss
C rss
160
100
20
20
16
12
8
4
0
5
100
0.1
10
1
6
5
4
3
2
1
0
−80
0
Common source
V DS = 10 V
I D = 1 mA
Pulse test
Common source
Ta = 25°C
Pulse test
−0.2
−40
Drain-source voltage V
Ambient temperature Ta (°C)
−0.4
0
I
DR
V
th
−0.6
– V
40
– Ta
1
DS
−0.8
80
TPCA8006-H
V GS = 0 V
10
DS
−1.0
(V)
120
2006-11-20
5
3
−1.2
160