TPCA8006-H(TE12LQM Toshiba, TPCA8006-H(TE12LQM Datasheet - Page 6

• Manufacturer Part Number: TPCA8006-H(TE12LQM
• Description: MOSFET N-CH 100V 18A SOP-8 ADV
• Manufacturer: Toshiba

Specifications of TPCA8006-H(TE12LQM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 67 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 780pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: 2-5Q1A
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 45A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 67mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.067 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 45 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
100
2.5
1.0
3.0
2.0
1.5
0.5
0.1
10
0
1
0.1
0
I D max (Continuous)
I D max (Pulse) *
*: Single - pulse
Curves must be derated
linearly with increase in
temperature.
(1)
(2)
Drain-source voltage V
Ta = 25°C
Ambient temperature Ta (°C)
40
1000
1
100
0.1
10
0.001
Safe operating area
1
DC Operation
(1) Device mounted on a glass-epoxy board (a)
(2) Device mounted on a glass-epoxy board (b)
(3) Tc = 25°C
Tc = 25°C
P
(Note2a)
(Note2b)
D
– Ta
(1) Device mounted on a
(2) Device mounted on a
ｔ＝10s
10
80
glass-epoxy board (a) (Note 2a)
glass-epoxy board (b) (Note 2b)
0.01
t = 1ms *
DS
100
120
10ms *
V DSS max
(V)
0.1
1000
160
Pulse width t
r
th
– t
1
6
w
w
(s)
10
50
40
30
20
10
0
0
Case temperature Tc (°C)
Single - pulse
(2)
(3)
(1)
100
40
P
D
80
1000
– Tc
TPCA8006-H
120
2006-11-20
160