HAT2173H-EL-E Renesas Electronics America, HAT2173H-EL-E Datasheet - Page 3

• Manufacturer Part Number: HAT2173H-EL-E
• Description: MOSFET N-CH 100V 25A LFPAK
• Manufacturer: Renesas Electronics America

Specifications of HAT2173H-EL-E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 6V @ 20mA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 4350pF @ 10V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: LFPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HAT2173H
Silicon N Channel Power MOS FET
Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW
Rev.2.00 Sep 26, 2005 page 1 of 7
High speed switching
Capable of 8 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
2. Value at Tch = 25
3. Tc = 25
= 12 m typ. (at V
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
10 s, duty cycle
°
Item
C
°
GS
C, Rg
= 10 V)
5
1%
1 2
50
3 4
I
D(pulse)
E
Symbol
Pch
I
AP
AR
V
V
Tstg
ch-C
Tch
I
GSS
I
DSS
DR
Note 2
D
Note 2
Note3
Note1
G
4
D
5
S S S
1 2 3
–55 to +150
Ratings
62.5
4.17
150
100
±20
100
25
25
25
30
1, 2, 3 Source
4
5
REJ03G0030-0200
Gate
Drain
Sep 26, 2005
°
Unit
C/W
mJ
°
°
W
V
V
A
A
A
A
(Ta = 25°C)
C
C
Rev.2.00