HAT2173H-EL-E Renesas Electronics America, HAT2173H-EL-E Datasheet - Page 4

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HAT2173H-EL-E

Manufacturer Part Number
HAT2173H-EL-E
Description
MOSFET N-CH 100V 25A LFPAK
Manufacturer
Renesas Electronics America
Datasheet

Specifications of HAT2173H-EL-E

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 12.5A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
6V @ 20mA
Gate Charge (qg) @ Vgs
61nC @ 10V
Input Capacitance (ciss) @ Vds
4350pF @ 10V
Power - Max
30W
Mounting Type
Surface Mount
Package / Case
LFPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HAT2173H-EL-E
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Company:
Part Number:
HAT2173H-EL-E
Quantity:
4 000
HAT2173H
Electrical Characteristics
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Rev.2.00 Sep 26, 2005 page 2 of 7
Item
Symbol
V
V
R
R
V
Coss
(BR)DSS
(BR)GSS
Crss
Ciss
Qgs
Qgd
t
t
I
I
V
GS(off)
|y
DS(on)
DS(on)
Qg
Rg
d(on)
d(off)
GSS
DSS
t
t
t
DF
rr
fs
r
f
|
Min
100
±20
4.0
27
4350
14.5
0.82
Typ
520
150
0.5
5.7
12
13
45
61
23
20
15
37
55
Max
17.5
1.07
±10
6.0
15
1
Unit
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
V
A
A
I
I
V
V
V
I
I
I
V
f = 1 MHz
V
I
V
V
Rg = 4.7
IF = 25 A, V
IF = 25 A, V
di
D
G
D
D
D
D
GS
DS
DS
DS
DD
GS
DD
F
= 10 mA, V
= 12.5 A, V
= 12.5 A, V
= 12.5 A, V
= 25 A
= ±100 A, V
/ dt = 100 A/ s
= ±16 V, V
= 100 V, V
= 10 V, I
= 10 V, V
= 50 V,V
= 10 V, I
30 V, R
Test Conditions
GS
GS
D
D
GS
GS
GS
GS
DS
GS
L
= 20 mA
= 12.5 A,
= 0
= 0,
DS
GS
= 2.4 ,
DS
= 10 V,
= 10 V
= 0
= 10 V
= 8 V
= 0,
= 0
= 0
= 0
Note4
(Ta = 25°C)
Note4
Note4
Note4

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