HAT2173H-EL-E Renesas Electronics America, HAT2173H-EL-E Datasheet - Page 5

• Manufacturer Part Number: HAT2173H-EL-E
• Description: MOSFET N-CH 100V 25A LFPAK
• Manufacturer: Renesas Electronics America

Specifications of HAT2173H-EL-E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 6V @ 20mA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 4350pF @ 10V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: LFPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HAT2173H
Main Characteristics
Rev.2.00 Sep 26, 2005 page 3 of 7
500
400
300
200
100
40
30
20
10
50
40
30
20
10
0
0
0
Drain to Source Saturation Voltage vs.
Drain to Source Voltage
Gate to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature
6.2 V
Gate to Source Voltage
4
2
8 V
50
10 V
4
8
100
Pulse Test
12
6
Pulse Test
150
Tc ( C)
I
D
V
V
16
8
= 50 A
GS
DS
6.0 V
5.8 V
5.6 V
5.4 V
5.2 V
10 A
20 A
(V)
(V)
200
10
20
0.01
500
100
100
0.1
Static Drain to Source on State Resistance
10
50
40
30
20
10
50
20
10
1
5
2
1
0
0.1 0.3
1
Drain to Source Voltage
Gate to Source Voltage
Operation in
this area is
limited by R
Tc = 25 C
1 shot Pulse
Pulse Test
V
Pulse Test
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
= 10 V
2
Drain Current
Tc = 75 C
3
1
vs. Drain Current
DS(on)
4
3
10
10
6
V
GS
I
30
D
25 C
-25 C
= 8 V
30
10 V
(A)
V
V
100
8
GS
DS
(V)
(V)
500
100
10