HAT2173H-EL-E Renesas Electronics America, HAT2173H-EL-E Datasheet - Page 6

• Manufacturer Part Number: HAT2173H-EL-E
• Description: MOSFET N-CH 100V 25A LFPAK
• Manufacturer: Renesas Electronics America

Specifications of HAT2173H-EL-E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 6V @ 20mA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 4350pF @ 10V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: LFPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HAT2173H
Rev.2.00 Sep 26, 2005 page 4 of 7
100
250
200
150
100
Static Drain to Source on State Resistance
50
20
10
-25
50
40
30
20
10
50
0
0.1
0
25 V
50 V
V
Pulse Test
I
Reverse Drain Current
V
D
DD
Case Temperature
Dynamic Input Characteristics
GS
= 25 A
0.3
0
Body-Drain Diode Reverse
= 100 V
Gate Charge
= 8 V
20
10 V
25
vs. Temperature
Recovery Time
1
V
40
DS
50
V
DD
di / dt = 100 A / s
V
I
3
GS
D
= 100 V
= 5 A, 10 A, 20 A
75
= 0, Ta = 25 C
60
50 V
25 V
5 A, 10 A, 20 A
Qg (nc)
10
100 125 150
Tc
I
80
V
DR
30
GS
( C)
(A)
100
100
20
16
12
8
4
0
10000
1000
3000
1000
1000
300
100
300
100
300
100
0.3
0.1
30
10
30
10
30
10
3
1
0.1 0.2
3
1
0.1
0
Drain to Source Voltage V
t d(on)
t r
Forward Transfer Admittance vs.
t f
0.3
Tc = -25 C
Switching Characteristics
10
Drain to Source Voltage
Typical Capacitance vs.
0.5
Drain Current
Drain Current I
V
Rg = 4.7 , duty
1
Drain Current
1
GS
20
25 C
2
= 10 V, V
3
5
30
t d(off)
10
10
I
75 C
V
Pulse Test
D
DS
D
DS
V
f = 1 MHz
= 10 V
(A)
20
(A)
GS
= 10 V
40
1 %
30
DS
= 0
Coss
Crss
Ciss
50
(V)
100
100
50