HAT2173H-EL-E Renesas Electronics America, HAT2173H-EL-E Datasheet - Page 7

• Manufacturer Part Number: HAT2173H-EL-E
• Description: MOSFET N-CH 100V 25A LFPAK
• Manufacturer: Renesas Electronics America

Specifications of HAT2173H-EL-E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 6V @ 20mA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 4350pF @ 10V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: LFPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HAT2173H
Rev.2.00 Sep 26, 2005 page 5 of 7
Vin
15 V
50
40
30
20
10
0
Source to Drain Voltage
10 V
Reverse Drain Current vs.
0.4
Source to Drain Voltage
Avalanche Test Circuit
0.03
0.01
V
Monitor
5 V
0.3
0.1
50
DS
3
1
10
0.8
Rg
0.5
D = 1
V
GS
1.2
= 0
Normalized Transient Thermal Impedance vs. Pulse Width
100
D. U. T
Pulse Test
I
Monitor
V
1.6
AP
SD
L
(V)
2.0
1 m
V
DD
Pulse Width PW (s)
10 m
0
V
100
80
60
40
20
DD
0
25
P
DM
ch - c(t) = s (t)
ch - c = 4.17 C/ W, Tc = 25 C
Channel Temperature Tch ( C)
Maximum Avalanche Energy vs.
100 m
Channel Temperature Derating
E
AR
I
50
AP
=
Avalanche Waveform
1
2
PW
T
I
D
L I
75
AP
1
ch - c
2
100
I
V
duty < 0.1 %
Rg
Tc = 25 C
AP
D =
DD
V
= 25 A
= 50 V
DSS
50
PW
V
T
125
DSS
– V
10
DD
V
DS
150
V
(BR)DSS