IPD25N06S4L-30 Infineon Technologies, IPD25N06S4L-30 Datasheet - Page 2

• Manufacturer Part Number: IPD25N06S4L-30
• Description: MOSFET N-CH 60V 25A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD25N06S4L-30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 2.2V @ 8µA
• Gate Charge (qg) @ Vgs: 16.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 1220pF @ 25V
• Power - Max: 29W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (5 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.0
Parameter
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
2)
j
=25 °C, unless otherwise specified
Symbol
R
R
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
thJC
thJA
DS(on)
-
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
j
j
GS
DS
DS
DS
GS
GS
GS
=25°C
=125°C
page 2
=V
=60V, V
=60V, V
=0V, I
=16V, V
=4.5V, I
=10V, I
2
Conditions
cooling area
GS
, I
2)
D
= 1mA
D
D
D
GS
GS
DS
=8µA
=25A
=12.5A
=0V,
=0V,
=0V
3)
min.
1.2
60
-
-
-
-
-
-
-
-
Values
0.01
typ.
1.7
36
23
5
-
-
-
-
-
IPD25N06S4L-30
max.
100
100
5.1
2.2
62
40
56
30
1
-
2009-03-23
Unit
K/W
V
µA
nA
m