IPD25N06S4L-30 Infineon Technologies, IPD25N06S4L-30 Datasheet - Page 5

• Manufacturer Part Number: IPD25N06S4L-30
• Description: MOSFET N-CH 60V 25A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD25N06S4L-30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 2.2V @ 8µA
• Gate Charge (qg) @ Vgs: 16.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 1220pF @ 25V
• Power - Max: 29W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (5 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
100
100
80
60
40
20
80
60
40
20
0
0
DS
GS
0
1
); T
); V
GS
j
j
DS
= 25 °C
1
= 6V
2
2
3
V
V
GS
DS
3
[V]
[V]
4
4
10 V
-55 °C
5
5
175 °C
4.5 V
25 °C
5 V
4 V
6 V
page 5
6
6
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
100
45
40
35
30
25
20
15
90
80
70
60
50
40
30
20
= f(I
= f(T
-60
0
D
j
); T
); I
GS
-20
D
j
4 V
20
= 25 °C
= 25 A; V
4.5 V
20
40
GS
T
I
j
D
60
= 10 V
[°C]
5 V
[A]
IPD25N06S4L-30
60
100
80
140
2009-03-23
6 V
10 V
100
180