AOD442 Alpha & Omega Semiconductor Inc, AOD442 Datasheet

MOSFET N-CH 60V 38A TO-252

AOD442

Manufacturer Part Number
AOD442
Description
MOSFET N-CH 60V 38A TO-252
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AOD442

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
38A
Vgs(th) (max) @ Id
2.7V @ 250µA
Gate Charge (qg) @ Vgs
68nC @ 10V
Input Capacitance (ciss) @ Vds
2300pF @ 30V
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1107-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AOD442
Manufacturer:
AO
Quantity:
40 000
Part Number:
AOD442
Manufacturer:
AOS/万代
Quantity:
20 000
Part Number:
AOD442G
Manufacturer:
AOS/万代
Quantity:
20 000
Rev 0 : Aug 2009
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
Avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
D
General Description
The AOD442/AOI442 used advanced trench technology to
provide excellent R
devices are suitable for use as a load switch or in PWM
applications.
Top View
G
G
B
A
TO252
DPAK
Parameter
C
DS(ON)
C
T
T
T
T
T
T
T
T
S
C
C
A
A
C
C
A
A
D
=25°C
=100°C
=25°C
=70°C
=25°C
=100°C
=25°C
=70°C
and low gate charge. Those
Bottom View
C
A
A D
A
=25°C unless otherwise noted
t ≤ 10s
Steady-State
Steady-State
S
G
Symbol
V
V
I
I
I
I
E
P
P
T
Symbol
D
DM
DSM
AS
www.aosmd.com
J
DS
GS
AS
D
DSM
, T
, I
R
R
, E
Top View
AR
STG
θJA
θJC
AR
V
100% UIS Tested
100% R
Product Summary
I
R
R
D
DS
DS(ON)
DS(ON)
(at V
TO-251A
G
IPAK
17.4
Typ
1.8
51
(at V
GS
(at V
D
g
=10V)
Tested
S
GS
GS
Maximum
-55 to 175
=10V)
= 4.5V)
Bottom View
±20
60
2.1
1.3
60
37
26
30
45
60
30
7
5
AOD442/AOI442
60V N-Channel MOSFET
D
Max
2.5
25
60
S
D
G
60V
37A
< 20mΩ
< 25mΩ
G
Units
Units
°C/W
°C/W
°C/W
mJ
°C
W
W
Page 1 of 6
V
V
A
A
A
D
S

Related parts for AOD442

AOD442 Summary of contents

Page 1

... General Description The AOD442/AOI442 used advanced trench technology to provide excellent R and low gate charge. Those DS(ON) devices are suitable for use as a load switch or in PWM applications. TO252 DPAK Top View Bottom View Absolute Maximum Ratings T =25°C unless otherwise noted ...

Page 2

... Ratings are based on low frequency and duty cycles to keep initial J(MAX) and case to ambient. θJC 2 FR-4 board with 2oz. Copper still air environment with T www.aosmd.com AOD442/AOI442 Min Typ Max Units =55° ...

Page 3

... Figure 2: Transfer Characteristics (Note E) 2.4 2.2 2 1.8 1.6 1.4 1.2 =10V 1 0 1.0E+02 I =20A D 1.0E+01 40 1.0E+00 1.0E-01 125°C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0 www.aosmd.com AOD442/AOI442 V =5V DS 125°C 25°C 2 (Volts =10V GS I =20A =4. =20A 100 125 150 175 0 Temperature (°C) 18 Figure 4: On-Resistance vs ...

Page 4

... Figure 10: Single Pulse Power Rating Junction-to- In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse .R θJC 40 0.001 0.01 Pulse Width (s) www.aosmd.com AOD442/AOI442 C iss C oss C rss (Volts =175°C J(Max) T =25° ...

Page 5

... Figure 15: Single Pulse Power Rating Junction-to- In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse .R θJA 40 Single Pulse 0.01 0.1 Pulse Width (s) www.aosmd.com AOD442/AOI442 37A 100 125 150 T (°C) CASE Figure 13: Power De-rating (Note F) T =25°C A ...

Page 6

... Resistive Switching Test Circuit & Waveforms RL Vds + DUT Vdd VDC - Vgs t t d(on 1 Vds + Vgs Vdd VDC Id - Vgs Diode Recovery Test Circuit & Waveforms Vgs Isd I + Vdd VDC - Vds www.aosmd.com AOD442/AOI442 Qg Qgs Qgd Charge 90% 10 d(off) t off DSS Idt dI/ Vdd Page ...

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