AOD442 Alpha & Omega Semiconductor Inc, AOD442 Datasheet - Page 2

• Manufacturer Part Number: AOD442
• Description: MOSFET N-CH 60V 38A TO-252
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AOD442

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 2.7V @ 250µA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 2300pF @ 30V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1107-2

Rev 0 : Aug 2009
A. The value of R
Power dissipation P
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
T
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
g
V
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
Q
t
t
t
t
t
Q
DSS
GSS
D(ON)
S
D(on)
r
D(off)
f
rr
J
FS
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
g
gs
gd
rr
=25°C.
(10V)
(4.5V)
DSS
θJA
is the sum of the thermal impedence from junction to case R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
θJA
DSM
is measured with the device mounted on 1in
is based on R
D
is based on T
Parameter
J(MAX)
J
θJA
=25°C unless otherwise noted)
and the maximum allowed junction temperature of 150°C. The value in any given application depends on
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
www.aosmd.com
2
FR-4 board with 2oz. Copper, in a still air environment with T
Conditions
I
V
V
V
V
V
V
V
I
V
V
V
V
R
I
2
J(MAX)
D
S
F
F
FR-4 board with 2oz. Copper, in a still air environment with T
DS
DS
DS
GS
GS
GS
DS
GS
GS
GS
GS
=20A, dI/dt=100A/µs
=20A, dI/dt=100A/µs
=250µA, V
=1A,V
GEN
=48V, V
=0V, V
=V
=10V, V
=10V, I
=4.5V, I
=5V, I
=0V, V
=0V, V
=10V, V
=10V, V
=175°C. Ratings are based on low frequency and duty cycles to keep initial
=3Ω
θJC
GS
GS
and case to ambient.
I
D
=0V
D
GS
DS
DS
=20A
D
=250µA
D
GS
DS
DS
DS
=20A
GS
= ±20V
=20A
=30V, f=1MHz
=0V, f=1MHz
=0V
=5V
=30V, I
=30V, R
=0V
D
L
=20A
T
=1.5Ω,
T
J
=125°C
J
=55°C
1535
Min
108
1.6
0.3
4.8
8.5
60
60
70
38
20
1920
AOD442/AOI442
0.65
47.6
24.2
14.4
28.2
Typ
155
116
2.1
0.7
7.4
5.1
5.5
16
31
20
65
34
46
6
A
=25°C.
A
=25°C. The
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2300
Max
100
200
165
2.7
0.8
20
37
25
32
68
30
20
41
1
5
1
7
Units
mΩ
mΩ
nC
nC
nC
nC
nC
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
A
S
V
A