AOD442 Alpha & Omega Semiconductor Inc, AOD442 Datasheet - Page 4

• Manufacturer Part Number: AOD442
• Description: MOSFET N-CH 60V 38A TO-252
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AOD442

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 2.7V @ 250µA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 2300pF @ 30V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1107-2

Rev 0 : Aug 2009
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1000.0
8
6
4
2
0
0.01
100.0
0.1
10.0
0
10
0.00001
1.0
0.1
0.0
1
0.01
R
limited
Figure 9: Maximum Forward Biased Safe
Figure 7: Gate-Charge Characteristics
DS(ON)
10
V
I
D
Single Pulse
DS
=20A
0.1
=30V
D=T
T
R
Operating Area (Note F)
J,PK
θJC
T
T
on
=2.5°C/W
=T
20
J(Max)
C
/T
=25°C
C
Q
0.0001
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
+P
g
=175°C
1
V
(nC)
DM
DS
.Z
(Volts)
θJC
30
DC
.R
10
θJC
40
10µs
www.aosmd.com
100
100µs
1ms
10ms
10µs
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.001
50
Pulse Width (s)
1000
3500
3000
2500
2000
1500
1000
500
0
200
160
120
80
40
0.0001
0
0
Figure 10: Single Pulse Power Rating Junction-to-
40
0.01
Figure 8: Capacitance Characteristics
10
C
0.001
oss
P
D
20
T
on
C
Pulse Width (s)
0.01
Case (Note F)
V
rss
DS
T
(Volts)
30
C
0.1
iss
0.1
T
T
AOD442/AOI442
J(Max)
C
40
=25°C
=175°C
1
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50
17
10
18
5
2
0
1
10
60