AOD442 Alpha & Omega Semiconductor Inc, AOD442 Datasheet - Page 3

• Manufacturer Part Number: AOD442
• Description: MOSFET N-CH 60V 38A TO-252
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AOD442

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 2.7V @ 250µA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 2300pF @ 30V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1107-2

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Rev 0 : Aug 2009
60
50
40
30
20
10
0
30
26
22
18
14
10
50
40
30
20
10
0
0
2
Figure 5: On-Resistance vs. Gate-Source Voltage
10V
Figure 3: On-Resistance vs. Drain Current and
Fig 1: On-Region Characteristics (Note E)
5
1
4
Gate Voltage (Note E)
10
4.5V
25°C
2
V
V
DS
(Note E)
GS
I
D
(Volts)
V
15
(Volts)
(A)
V
6
GS
GS
=4.5V
=10V
125°C
3
20
I
D
8
=20A
4V
V
4
www.aosmd.com
25
GS
3.5V
=3V
30
10
5
50
40
30
20
10
0
2.4
2.2
1.8
1.6
1.4
1.2
0.8
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
2
2
1
0
40
Figure 2: Transfer Characteristics (Note E)
0.0
25
Figure 6: Body-Diode Characteristics (Note E)
Figure 4: On-Resistance vs. Junction
2.5
V
I
D
V
50
0.2
GS
=20A
DS
125°C
=10V
125°C
Temperature (Note E)
=5V
Temperature (°C)
3
V
75
GS
0.4
(Volts)
100
V
SD
3.5
0.6
(Volts)
125
25°C
AOD442/AOI442
V
I
D
GS
=20A
0.8
=4.5V
150
4
Page 3 of 6
25°C
17
10
18
5
2
175
0
1.0
4.5
200
1.2