IPB030N08N3 G Infineon Technologies, IPB030N08N3 G Datasheet - Page 7

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IPB030N08N3 G

Manufacturer Part Number
IPB030N08N3 G
Description
MOSFET N-CH 80V 160A TO263-7
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPB030N08N3 G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
3.5V @ 155µA
Gate Charge (qg) @ Vgs
117nC @ 10V
Input Capacitance (ciss) @ Vds
8110pF @ 40V
Power - Max
214W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (7 leads + tab)
Transistor Polarity
N Channel
Drain Source Voltage Vds
80V
On Resistance Rds(on)
2.5mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
TO-263
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000444100
13 Avalanche characteristics
I
15 Drain-source breakdown voltage
V
1000
100
t
10
90
80
70
60
1
0.1
-60
R
T
T
I
-20
1
20
t
T
AV
j
60
10
[°C]
[µs]
100
100
140
1000
180
14 Typ. gate charge
V
16 Gate charge waveforms
Q
V
12
10
V
Q
8
6
4
2
0
0
V
I
Q
Q
Q
gate
g
Q
50
[nC]
Q
IPB030N08N3 G
Q
g ate
100

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