BTS247Z Infineon Technologies, BTS247Z Datasheet - Page 3

• Manufacturer Part Number: BTS247Z
• Description: MOSFET N-CH 55V 33A TO220-5
• Manufacturer: Infineon Technologies
• Series: TEMPFET®r

Specifications of BTS247Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 2V @ 90µA
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Input Capacitance (ciss) @ Vds: 1730pF @ 25V
• Power - Max: 120W
• Mounting Type: Through Hole
• Package / Case: TO-220-5 (Bent and Staggered Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BTS247ZNK; SP000012184

Data Sheet
Thermal Characteristics
Parameter
Characteristics
junction - case:
Thermal resistance @ min. footprint
Thermal resistance @ 6 cm
Electrical Characteristics
Parameter
at T
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
I
Zero gate voltage drain current
V
V
V
Gate-source leakage current
V
V
Drain-Source on-state resistance
V
V
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70μm thick) copper area for drain
D
D
connection. PCB mounted vertical without blown air.
GS
DS
DS
DS
GS
GS
GS
GS
= 90 μA
= 250 μA
j
= 50 V, V
= 50 V, V
= 50 V, V
= 0 V, I
= 20 V, V
= 20 V, V
= 4.5 V, I
= 10 V, I
= 25°C, unless otherwise specified
D
D
D
= 0.25 mA
GS
GS
GS
DS
DS
= 12 A
= 12 A
= 0 V, T
= 0 V, T
= 0 V, T
= 0 V, T
= 0 V, T
GS
j
j
j
j
j
= -40 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
2
= V
cooling area
DS
1)
3
Symbol
R
R
R
Symbol
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
thJC
th(JA)
th(JA)
min.
min.
1.2
55
-
-
-
-
-
-
-
-
-
-
-
Values
Values
1.65
typ.
typ.
1.6
0.1
10
20
22
15
33
-
-
-
-
-
Speed TEMPFET
Rev.1.3, 2009-12-04
max.
max.
1.25
100
100
100
0.1
62
40
28
18
2
-
1
-
BTS247Z
Unit
V
μA
nA
m
Unit
K/W