BTS247Z Infineon Technologies, BTS247Z Datasheet - Page 7

• Manufacturer Part Number: BTS247Z
• Description: MOSFET N-CH 55V 33A TO220-5
• Manufacturer: Infineon Technologies
• Series: TEMPFET®r

Specifications of BTS247Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 2V @ 90µA
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Input Capacitance (ciss) @ Vds: 1730pF @ 25V
• Power - Max: 120W
• Mounting Type: Through Hole
• Package / Case: TO-220-5 (Bent and Staggered Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BTS247ZNK; SP000012184

Data Sheet
1 Maximum allowable power dissipation
P
3 Typ. transient thermal impedance
Z
Parameter: D=t
thJA
tot
K/W
10
130
110
100
10
10
10
= f(T
W
90
80
70
60
50
40
30
20
10
=f( t
-1
0
-40
2
1
0
10
-5
p
C
) @ 6 cm
D=0.5
)
10
0.05
0.02
0.01
0.2
0.1
-4
0
10
p
/T
-3
Single pulse
40
10
2
cooling area
-2
10
80
-1
10
0
120
10
1
°C
T
t
p
s
C
180
10
3
7
2 Drain current
I
4 Transient thermal impedance
Z
parameter : D = t
D
thJC
= f( T
K/W
10
10
10
10
10
10
40
30
25
20
15
10
A
= f (t
-1
-2
-3
-4
5
0
1
0
10
0
C
D=0.5
-8
); V
0.05
0.02
0.01
10
20
p
0.2
0.1
)
-7
GS
10
40
Single pulse
-6
10
p
4.5V
60
/T
-5
10
80
-4
10
100 120 140 °C
-3
Speed TEMPFET
10
Rev.1.3, 2009-12-04
-2
10
-1
10
BTS247Z
0
T
t
p
C
s
180
10
2