BTS247Z Infineon Technologies, BTS247Z Datasheet - Page 9

• Manufacturer Part Number: BTS247Z
• Description: MOSFET N-CH 55V 33A TO220-5
• Manufacturer: Infineon Technologies
• Series: TEMPFET®r

Specifications of BTS247Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 2V @ 90µA
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Input Capacitance (ciss) @ Vds: 1730pF @ 25V
• Power - Max: 120W
• Mounting Type: Through Hole
• Package / Case: TO-220-5 (Bent and Staggered Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BTS247ZNK; SP000012184

Data Sheet
9 Typ. transfer characteristics
I
11 Typ. capacitances
C = f( V
D
= f( V
10
10
nF
10
70
50
40
30
20
10
A
-1
0
1
0
0
0
DS
GS
); V
); V
4
GS
8
1
DS
=0 V, f=1 MHz
12
= 12V; T
16
2
20
j
= 25°C
24
3
28
32
V
V
V
V
Ciss
Coss
Crss
GS
DS
40
5
9
10 Typ. input threshold voltage
V
Parameter: I
12 Typ. forward charcteristics of
reverse diode I
t
p
GS(th)
= 80μs (spread); Parameter: T j
10
10
10
10
2.4
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
A
-1
-50
2
1
0
0.0
= f(T
-25
0.2
D
j
); V
0
0.4
F
DS
25
= f( V
=V
0.6
50
150°C
GS
SD
75
)
0.8
Speed TEMPFET
Rev.1.3, 2009-12-04
100 125 °C
1.0
25°C
BTS247Z
V
T
V
9mA
j
SD
90mA
0.9mA
90μA
175
1.4