SPA11N80C3 Infineon Technologies, SPA11N80C3 Datasheet - Page 2

• Manufacturer Part Number: SPA11N80C3
• Description: MOSFET N-CH 800V 11A TO220FP
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPA11N80C3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3.9V @ 680µA
• Gate Charge (qg) @ Vgs: 85nC @ 10V
• Input Capacitance (ciss) @ Vds: 1600pF @ 100V
• Power - Max: 41W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 450mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.45 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 41 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000216320; SPA11N80C3IN; SPA11N80C3X; SPA11N80C3XK; SPA11N80C3XTIN; SPA11N80C3XTIN

Rev. 2.9
Maximum ratings, at T
Parameter
Continuous diode forward current
Diode pulse current
Reverse diode dv /dt
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Soldering temperature,
wave soldering only allowed at leads
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
2)
4)
j
=25 °C, unless otherwise specified
j
=25 °C, unless otherwise specified
Symbol Conditions
Symbol Conditions
I
I
dv /dt
R
R
T
V
V
V
I
I
R
R
S
S,pulse
DSS
GSS
sold
(BR)DSS
(BR)DS
GS(th)
thJC
thJA
DS(on)
G
T
leaded
1.6 mm (0.063 in.)
from case for 10s
V
V
V
V
T
V
T
V
V
T
V
T
f =1 MHz, open drain
page 2
C
j
j
j
j
GS
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=25 °C
=150 °C
=25 °C
=V
=800 V, V
=800 V, V
=0 V, I
=0 V, I
=20 V, V
=10 V, I
=10 V, I
GS
, I
D
D
D
=250 µA
=11 A
D
D
=0.68 mA
DS
=7.1 A,
=7.1 A,
GS
GS
=0 V
=0 V,
=0 V,
min.
800
2.1
-
-
-
-
-
-
-
-
-
-
Values
Value
0.39
1.05
typ.
870
100
1.2
11
33
4
3
-
-
-
-
-
-
SPA11N80C3
max.
0.45
260
100
3.7
3.9
80
20
-
-
-
-
-
Unit
A
V/ns
Unit
K/W
°C
V
µA
nA
Ω
Ω
2008-10-15