SPA11N80C3 Infineon Technologies, SPA11N80C3 Datasheet - Page 5

• Manufacturer Part Number: SPA11N80C3
• Description: MOSFET N-CH 800V 11A TO220FP
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPA11N80C3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3.9V @ 680µA
• Gate Charge (qg) @ Vgs: 85nC @ 10V
• Input Capacitance (ciss) @ Vds: 1600pF @ 100V
• Power - Max: 41W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 450mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.45 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 41 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000216320; SPA11N80C3IN; SPA11N80C3X; SPA11N80C3XK; SPA11N80C3XTIN; SPA11N80C3XTIN

Rev. 2.9
5 Typ. output characteristics
I
parameter: V
7 Drain-source on-state resistance
R
D
=f(V
DS(on)
1.2
0.8
0.6
0.4
0.2
21
18
15
12
DS
=f(T
1
0
9
6
3
0
-60
); T
0
j
); I
j
=150 °C; t
GS
D
-20
=7.1 A; V
5
4.5 V
20
98 %
p
=10 µs
5 V
10
GS
V
T
=10 V
DS
j
60
[°C]
typ
[V]
5.5 V
15
100
10 V 20 V
20
140
6 V
180
page 5
25
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. transfer characteristics
I
parameter: T
D
DS(on)
=f(V
1.8
1.6
1.4
1.2
0.8
40
30
20
10
=f(I
GS
1
0
0
0
); |V
D
4 V
); T
GS
DS
j
4.5 V
j
|>2|I
=150 °C
5
2
5 V
D
|R
10
DS(on)max
4
V
I
D
GS
15
[A]
[V]
6 V
; t
p
6
=10 µs
20
SPA11N80C3
6.5 V
25 °C
150 °C
8
25
20 V
10 V
2008-10-15
30
10