IPW60R160C6 Infineon Technologies, IPW60R160C6 Datasheet

MOSFET N-CH 600V 23.8A TO247

IPW60R160C6

Manufacturer Part Number
IPW60R160C6
Description
MOSFET N-CH 600V 23.8A TO247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of IPW60R160C6

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
160 mOhm @ 11.3A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
23.8A
Vgs(th) (max) @ Id
3.5V @ 750µA
Gate Charge (qg) @ Vgs
75nC @ 10V
Input Capacitance (ciss) @ Vds
1660pF @ 100V
Power - Max
176W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.14ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
30V
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
TO-247
Rohs Compliant
Yes
Packages
PG-TO247-3
Vds (max)
600.0 V
Package
TO-247
Rds(on) @ Tj=25°c Vgs=10
160.0 mOhm
Id(max) @ Tc=25°c
23.8 A
Idpuls (max)
70.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPW60R160C6
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPW60R160C6
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
M O S F E T
Metal Oxide Semiconductor Field Effect Transistor
C o o l M O S C 6
600V CoolMOS™ C6 Power Transistor
IPx60R160C6
D a t a S h e e t
Rev. 2.1, 2010-02-09
Final
In d u s tr ia l & M u l ti m a r k e t

Related parts for IPW60R160C6

IPW60R160C6 Summary of contents

Page 1

Metal Oxide Semiconductor Field Effect Transistor 600V CoolMOS™ C6 Power Transistor IPx60R160C6 Rev. 2.1, 2010-02-09 Final ...

Page 2

... PG-TO220 FullPAK 1) J-STD20 and JESD22 Final Data Sheet *Q and E dson g oss Unit µJ A/µs Marking 6R160C6 2 IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 drain pin 2 gate pin 1 source pin 3 Related Links IFX C6 Product Brief IFX C6 Portfolio IFX CoolMOS Webpage IFX Design tools Rev. 2.1, 2010-02-09 ...

Page 3

Table of Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 4

Maximum ratings °C, unless otherwise specified. j Table 2 Maximum ratings Parameter 1) Continuous drain current 2) Pulsed drain current Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source ...

Page 5

... Thermal characteristics Table 3 Thermal characteristics TO-220 (IPP60R160C6),TO-247 (IPW60R160C6) Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering only allowed at leads Table 4 Thermal characteristics TO-220FullPAK (IPA60R160C6) Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering only allowed at ...

Page 6

Electrical characteristics T Electrical characteristics, at j=25 °C, unless otherwise specified. Table 6 Static characteristics Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Table 7 Dynamic characteristics ...

Page 7

Table 8 Gate charge characteristics Parameter Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Table 9 Reverse diode characteristics Parameter Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Final ...

Page 8

Electrical characteristics diagrams Table 10 Power dissipation TO-220, TO-247, TO-263 tot C Table 11 Max. transient thermal impedance TO-220, TO-247, TO-263 Z =f(tp); parameter: D=t /T (thJC) p Final Data Sheet 600V CoolMOS™ C6 ...

Page 9

Table 12 Safe operating area T =25 °C C TO-220, TO-247, TO-263 I T =f(V ); =25 °C; D=0; parameter Table 13 Safe operating area T =80 °C C TO-220, TO-247, TO-263 I =f ...

Page 10

Table 14 T Typ. output characteristics I =f =25 °C; parameter Table 15 Typ. drain-source on-state resistance R =f =125 °C; parameter: V DS(on Final Data Sheet 600V CoolMOS™ C6 ...

Page 11

Table 16 Typ. transfer characteristics I =f =20V Table 17 Avalanche energy Final Data Sheet 600V CoolMOS™ C6 Power Transistor Electrical characteristics ...

Page 12

Table 18 Typ. capacitances C=f f=1 MHz DS GS Table 19 Forward characteristics of reverse diode I =f(V ); parameter Final Data Sheet 600V CoolMOS™ C6 Power Transistor Electrical characteristics diagrams C ...

Page 13

Test circuits Table 20 Switching times test circuit and waveform for inductive load Switching times test circuit for inductive load Table 21 Unclamped inductive load test circuit and waveform Unclamped inductive load test circuit I ...

Page 14

Package outlines Figure 1 Outlines TO-247, dimensions in mm/inches Final Data Sheet 600V CoolMOS™ C6 Power Transistor 14 IPx60R160C6 Package outlines Rev. 2.1, 2010-02-09 ...

Page 15

Figure 2 Outlines TO-220, dimensions in mm/inches Final Data Sheet 600V CoolMOS™ C6 Power Transistor 15 IPx60R160C6 Package outlines Rev. 2.1, 2010-02-09 ...

Page 16

Figure 3 Outlines TO-220 FullPAK, dimensions in mm/inches Final Data Sheet 600V CoolMOS™ C6 Power Transistor 16 IPx60R160C6 Package outlines Rev. 2.1, 2010-02-09 ...

Page 17

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Page 18

... Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system ...

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