IPW60R160C6 Infineon Technologies, IPW60R160C6 Datasheet - Page 13

• Manufacturer Part Number: IPW60R160C6
• Description: MOSFET N-CH 600V 23.8A TO247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPW60R160C6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 11.3A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 23.8A
• Vgs(th) (max) @ Id: 3.5V @ 750µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 1660pF @ 100V
• Power - Max: 176W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.14ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Packages: PG-TO247-3
• Vds (max): 600.0 V
• Package: TO-247
• Rds(on) @ Tj=25°c Vgs=10: 160.0 mOhm
• Id(max) @ Tc=25°c: 23.8 A
• Idpuls (max): 70.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Table 20
Table 21
Table 22
Final Data Sheet
Switching times test circuit for inductive load
Unclamped inductive load test circuit
Test circuit for diode recovery times
R
G1
R
R
G2
G1
V
Test circuits
Switching times test circuit and waveform for inductive load
Unclamped inductive load test circuit and waveform
Test circuit and waveform for diode recovery times
= R
GS
I
D
I
G2
D
V
V
V
DS
DS
DS
Switching time waveform
Unclamped inductive waveform
Diode recovery waveform
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V
V
GS
DS
V
DS
600V CoolMOS™ C6 Power Transistor
10%
90%
I
D
t
d(on)
t
on
t
r
V
t
D
d(off)
t
off
Rev. 2.1, 2010-02-09
t
f
V
(BR)DS
IPx60R160C6
Test circuits
V
DS