IPW60R160C6 Infineon Technologies, IPW60R160C6 Datasheet - Page 10

• Manufacturer Part Number: IPW60R160C6
• Description: MOSFET N-CH 600V 23.8A TO247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPW60R160C6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 11.3A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 23.8A
• Vgs(th) (max) @ Id: 3.5V @ 750µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 1660pF @ 100V
• Power - Max: 176W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.14ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Packages: PG-TO247-3
• Vds (max): 600.0 V
• Package: TO-247
• Rds(on) @ Tj=25°c Vgs=10: 160.0 mOhm
• Id(max) @ Tc=25°c: 23.8 A
• Idpuls (max): 70.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Final Data Sheet
Table 14
Table 15
I
Typ. output characteristics
Typ. drain-source on-state resistance
R
D
DS(on)
=f(V
DS
=f(I
); T
D
); T
j
=25 °C; parameter: V
j
=125 °C; parameter: V
T
C
=25 °C
GS
GS
10
Typ. output characteristics T
I
Drain-source on-state resistance
R
D
DS(on)
=f(V
DS
600V CoolMOS™ C6 Power Transistor
=f(T
); T
j
); I
j
=125 °C; parameter: V
D
=11.3 A; V
Electrical characteristics diagrams
GS
=10 V
j
=125 °C
Rev. 2.1, 2010-02-09
GS
IPx60R160C6