IRF644S Vishay, IRF644S Datasheet - Page 2

• Manufacturer Part Number: IRF644S
• Description: MOSFET N-CH 250V 14A D2PAK
• Manufacturer: Vishay

Specifications of IRF644S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF644S

IRF644S, SiHF644S
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
www.vishay.com
2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
DS
SD
DD
Temperature Coefficient
≤ 14 A, dI/dt ≤ 150 A/µs, V
= 50 V, starting T
a
J
= 25 °C, L = 4.5 mH, R
c
J
DD
= 25 °C, unless otherwise noted
≤ V
DS
, T
J
≤ 150 °C.
SYMBOL
SYMBOL
ΔV
G
R
V
t
t
I
I
C
R
V
C
R
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
= 25 Ω, I
GSS
DSS
g
Q
L
DS
L
t
DS
oss
t
thJA
thJA
thJC
iss
rss
gd
fs
gs
r
f
D
S
g
C
/T
= 25 °C, unless otherwise noted
J
AS
= 14 A (see fig. 12).
Between lead,
6 mm (0.25") from
package and center of
die contact
V
V
V
for 10 s
GS
GS
R
DS
G
Reference to 25 °C, I
= 10 V
= 10 V
= 9.1 Ω, R
= 200 V, V
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
DD
TEST CONDITIONS
DS
DS
DS
GS
-
-
-
= 250 V, V
= 125 V, I
= V
= 50 V, I
= 0 V, I
V
V
V
GS
DS
D
GS
I
GS
GS
D
= 8.7 Ω, see fig. 10
= ± 20 V
, I
= 25 V,
= 7.9 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
D
= 250 µA
D
= 250 µA
I
GS
= 8.4 A
D
SYMBOL
= 7.9 A,
T
= 8.4 A
dV/dt
D
J
= 0 V
, T
= 1 mA
J
DS
= 125 °C
G
stg
b
= 200 V,
b
MAX.
D
S
b
1.0
b
62
40
- 55 to + 150
MIN.
250
2.0
6.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
LIMIT
300
4.8
S-Pending-Rev. B, 09-Oct-08
d
Document Number: 91040
TYP.
1300
0.34
330
4.5
7.5
85
11
24
53
49
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
0.28
250
4.0
25
68
11
35
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
V/ns
°C
UNIT
V/°C
nA
µA
nC
nH
pF
ns
V
V
Ω
S