IRF644S Vishay, IRF644S Datasheet - Page 4

• Manufacturer Part Number: IRF644S
• Description: MOSFET N-CH 250V 14A D2PAK
• Manufacturer: Vishay

Specifications of IRF644S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF644S

IRF644S, SiHF644S
Vishay Siliconix
www.vishay.com
4
91040_03
91040_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
1
0
- 60 - 40 - 20 0
4
Fig. 3 - Typical Transfer Characteristics
I
V
150
D
GS
= 7.9 A
°
= 10 V
V
C
5
GS ,
T
J ,
Junction Temperature (°C)
Gate-to-Source Voltage (V)
25
6
20 40 60 80 100 120 140 160
°
C
7
20 µs Pulse Width
V
DS
8
=
50 V
9
10
91040_05
91040_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
3000
2400
1800
1200
600
20
16
12
0
8
4
0
10
0
I
0
D
= 7.9 A
10
V
DS ,
Q
G
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
20
V
DS
= 50 V
30
V
C
C
C
V
GS
DS
iss
rss
oss
= 0 V, f = 1 MHz
= C
= C
= 125 V
= C
S-Pending-Rev. B, 09-Oct-08
40
10
V
gs
gd
C
C
C
ds
DS
Document Number: 91040
1
iss
oss
rss
+ C
+ C
= 200 V
gd
50
gd
For test circuit
see figure 13
, C
ds
Shorted
60
70