IRF644S Vishay, IRF644S Datasheet - Page 5

• Manufacturer Part Number: IRF644S
• Description: MOSFET N-CH 250V 14A D2PAK
• Manufacturer: Vishay

Specifications of IRF644S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF644S

Document Number: 91040
S-Pending-Rev. B, 09-Oct-08
91040_07
91040_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
10
0
-1
2
1
1
3
5
2
5
2
5
2
0.5
1
Fig. 8 - Maximum Safe Operating Area
2
V
V
0.6
SD
DS
Operation in this area limited
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
5
0.7
10
T
T
Single Pulse
150
C
J
by R
= 150 °C
= 25 °C
2
°
0.8
C
DS(on)
5
25
10
°
0.9
C
2
2
V
1.0
100
1
10
GS
10
ms
= 0 V
µs
ms
5
µs
1.1
10
3
91040_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
14
12
10
2
8
6
4
0
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
25
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
50
d(on)
T
C
V
, Case Temperature (°C)
IRF644S, SiHF644S
DS
t
r
75
D.U.T.
100
Vishay Siliconix
R
D
t
d(off)
t
125
f
+
-
www.vishay.com
V
DD
150
5