IRF644S Vishay, IRF644S Datasheet - Page 6

• Manufacturer Part Number: IRF644S
• Description: MOSFET N-CH 250V 14A D2PAK
• Manufacturer: Vishay

Specifications of IRF644S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF644S

IRF644S, SiHF644S
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
91040_11
to obtain
AS
10
R
10 V
0.1
10
G
-2
1
10
V
-5
0 − 0.5
0.2
0.1
0.05
0.02
0.01
DS
t
p
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T
10
0.01 Ω
L
-4
91040_12c
Single Pulse
(Thermal Response)
1200
1000
600
800
400
200
0
25
V
10
DD
Starting T
t
-3
+
1
-
= 50 V
, Rectangular Pulse Duration (s)
V
50
DD
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
J
, Junction Temperature (°C)
75
10
-2
100
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
125
V
I
AS
0.1
DS
6.3 A
8.9 A
14 A
I
D
150
Notes:
1. Duty Factor, D = t
2. Peak T
1
t
p
j
= P
P
DM
DM
S-Pending-Rev. B, 09-Oct-08
x Z
Document Number: 91040
t
1
1
thJC
/t
V
2
DS
t
2
+ T
C
10
V
DD