IRF644S Vishay, IRF644S Datasheet - Page 7

• Manufacturer Part Number: IRF644S
• Description: MOSFET N-CH 250V 14A D2PAK
• Manufacturer: Vishay

Specifications of IRF644S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF644S

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91040.
Document Number: 91040
S-Pending-Rev. B, 09-Oct-08
V
Fig. 13a - Basic Gate Charge Waveform
GS
V
G
Q
GS
Charge
Q
Q
GD
G
Re-applied
voltage
Reverse
recovery
current
+
R
-
G
D.U.T
*
Driver gate drive
D.U.T. I
D.U.T. V
Inductor current
V
GS
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
Fig. 14 - For N-Channel
+
-
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
SD
Diode recovery
current
controlled by duty factor "D"
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
dI/dt
current transformer
D =
-
G
Period
P.W.
+
12 V
V
V
I
SD
GS
DD
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
= 10 V*
+
-
Current regulator
V
DD
0.2 µF
IRF644S, SiHF644S
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
Vishay Siliconix
D.U.T.
I
D
+
-
V
www.vishay.com
DS
7