IRF9530STRR Vishay, IRF9530STRR Datasheet - Page 3

• Manufacturer Part Number: IRF9530STRR
• Description: MOSFET P-CH 100V 12A D2PAK
• Manufacturer: Vishay

Specifications of IRF9530STRR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 7.2A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 860pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91077
S09-0017-Rev. A, 19-Jan-09
91077_01
91077_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
1
0
10
1
0
10
-1
Top
Bottom
Top
Bottom
-1
- V
- V
DS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
DS ,
V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
GS
V
, Drain-to-Source Voltage (V)
GS
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
10
10
25 °C
175 °C
1
- 4.5 V
1
- 4.5 V
C
C
= 175 °C
= 25 °C
91077_03
91077_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0
- 60- 40 - 20 0
4
Fig. 3 - Typical Transfer Characteristics
I
V
D
GS
= - 12 A
= - 10 V
- V
IRF9530S, SiHF9530S
5
T
GS ,
J ,
Junction Temperature (°C)
Gate-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
6
175
25
°
C
7
°
C
Vishay Siliconix
20 µs Pulse Width
V
DS
8
= -
50 V
9
www.vishay.com
10
3