IRF9530STRR Vishay, IRF9530STRR Datasheet - Page 5

• Manufacturer Part Number: IRF9530STRR
• Description: MOSFET P-CH 100V 12A D2PAK
• Manufacturer: Vishay

Specifications of IRF9530STRR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 7.2A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 860pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 91077
S09-0017-Rev. A, 19-Jan-09
91077_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
91077_11
12
10
8
6
4
0
2
25
10
0.1
10
-2
1
10
50
-5
D = 0.5
0.2
0.1
0.05
0.02
0.01
T
C
, Case Temperature (°C)
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
-4
125
Single Pulse
(Thermal Response)
150
10
t
-3
1
, Rectangular Pulse Duration (s)
175
10
-2
0.1
10 %
90 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
GS
DS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
IRF9530S, SiHF9530S
Notes:
1. Duty Factor, D = t
2. Peak T
GS
t
d(on)
V
DS
t
r
1
j
= P
P
DM
DM
D.U.T.
x Z
t
1
R
1
Vishay Siliconix
thJC
/t
D
2
t
d(off)
t
+ T
2
C
10
t
f
+
-
www.vishay.com
V
DD
5