IRF9530STRR Vishay, IRF9530STRR Datasheet - Page 4

• Manufacturer Part Number: IRF9530STRR
• Description: MOSFET P-CH 100V 12A D2PAK
• Manufacturer: Vishay

Specifications of IRF9530STRR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 7.2A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 860pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF9530S, SiHF9530S
Vishay Siliconix
www.vishay.com
4
91077_06
91077_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1800
1500
1200
900
600
300
20
16
12
8
4
0
0
10
0
I
0
D
= - 12 A
V
- V
DS
10
DS ,
Q
= - 20 V
V
G
DS
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
= - 50 V
V
20
DS
V
C
C
C
= - 80 V
GS
iss
rss
oss
= 0 V, f = 1 MHz
= C
= C
= C
10
gs
gd
30
ds
1
+ C
+ C
C
C
C
iss
oss
rss
gd
gd
For test circuit
see figure 13
, C
40
ds
Shorted
50
91076_07
91077_08
10
10
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
0.1
10
-1
1
0
2
3
5
2
5
2
5
2
5
2
1
1.0
0.1
Fig. 8 - Maximum Safe Operating Area
2
- V
- V
5
SD
DS
Operation in this area limited
2.0
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
1
175
2
°
C
T
T
Single Pulse
25
C
J
by R
5
= 175 °C
= 25 °C
°
3.0
C
10
DS(on)
2
S09-0017-Rev. A, 19-Jan-09
Document Number: 91077
5
10
4.0
10
100
1
10
2
V
ms
GS
2
µs
ms
µs
= 0 V
5
5.0
10
3