PSMN005-25D,118 NXP Semiconductors, PSMN005-25D,118 Datasheet - Page 9

• Manufacturer Part Number: PSMN005-25D,118
• Description: MOSFET N-CH 25V 75A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN005-25D,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 60nC @ 5V
• Input Capacitance (ciss) @ Vds: 3500pF @ 20V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0058 Ohms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 75 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055816118; PSMN005-25D /T3; PSMN005-25D /T3

Philips Semiconductors
Product specification
(TM)
N-channel logic level TrenchMOS
transistor
PSMN005-25D
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15
1.5
2.5
4.57
Fig.17. SOT428 : soldering pattern for surface mounting .
October 1999
9
Rev 1.100