2N7000,126 NXP Semiconductors, 2N7000,126 Datasheet - Page 7

• Manufacturer Part Number: 2N7000,126
• Description: MOSFET N-CH 60V 300MA TO-92
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of 2N7000,126

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 40pF @ 10V
• Power - Max: 830mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 2N7000 AMO; 2N7000 AMO; 934003460126

Philips Semiconductors
9397 750 07153
Product specification
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
I
T
D
j
= 25 C and 150 C; V
= 1 mA; V
V GS(th) (V)
junction temperature.
drain current; typical values.
g fs (S)
0.45
0.35
0.25
0.15
0.05
2.5
1.5
0.5
0.5
0.4
0.3
0.2
0.1
3
2
1
0
0
-60
DS
0
V DS > I D X R DSon
= V
0.1
-20
GS
0.2
DS
20
0.3
min
typ
I
T j ( o C)
D
I
0.4
60
D
(A)
R
DSon
0.5
100
0.6
T j = 25
140
150
0.7
03aa34
03aa07
o
C
o
C
180
0.8
Rev. 03 — 19 May 2000
N-channel enhancement mode field-effect transistor
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
T
V
j
GS
= 25 C; V
C iss , C oss
C rss (pF)
gate-source voltage.
as a function of drain-source voltage; typical
values.
= 0 V; f = 1 MHz
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
I D
(A)
100
10
1
0
0.1
DS
0.5
= 5 V
1
1
min
V DS (V)
V GS (V)
1.5
© Philips Electronics N.V. 2000. All rights reserved.
10
2
typ
2.5
2N7000
03aa37
03aa09
C oss
C iss
C rss
100
3
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