2N7000,126 NXP Semiconductors, 2N7000,126 Datasheet - Page 8

• Manufacturer Part Number: 2N7000,126
• Description: MOSFET N-CH 60V 300MA TO-92
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of 2N7000,126

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 40pF @ 10V
• Power - Max: 830mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 2N7000 AMO; 2N7000 AMO; 934003460126

Philips Semiconductors
9397 750 07153
Product specification
Fig 13. Source (diode forward) current as a function of source-drain (diode forward)
T
j
= 25 C and 150 C; V
voltage; typical values.
Rev. 03 — 19 May 2000
I S (A)
GS
0.8
0.6
0.4
0.2
1
0
= 0 V
0
N-channel enhancement mode field-effect transistor
V GS = 0 V
0.2
0.4
V SD (V)
0.6
150
o
C
0.8
T j = 25
1
03aa08
o
C
1.2
© Philips Electronics N.V. 2000. All rights reserved.
2N7000
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