IRF7807D2TR International Rectifier, IRF7807D2TR Datasheet

IRF7807D2TR

Manufacturer Part Number

IRF7807D2TR

Description

MOSFET N-CH 30V 8.3A 8-SOIC

Manufacturer

International Rectifier

Series

FETKY™r

Datasheet

1.IRF7807D2.pdf (8 pages)

Specifications of IRF7807D2TR

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Diode (Isolated)

Rds On (max) @ Id, Vgs

25 mOhm @ 7A, 4.5V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

8.3A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

17nC @ 5V

Power - Max

2.5W

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7807D2TRPBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 8
Download datasheet (97Kb)

• Co-Pack N-channel HEXFET Power MOSFET

• Ideal for Synchronous Rectifiers in DC-DC

• Low Conduction Losses

• Low Switching Losses

• Low Vf Schottky Rectifier

Description

The FETKY

and Schottky diodes offers the designer an innovative,

board space saving solution for switching regulator and

power management applications. HEXFET power

MOSFETs utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area.

Combining this technology with International Rectifier’s

low forward drop Schottky rectifiers results in an extremely

efficient device suitable for use in a wide variety of

portable electronics applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics. The SO-

8 package is designed for vapor phase, infrared or wave

soldering techniques.

Thermal Resistance

Absolute Maximum Ratings

www.irf.com

Parameter

Maximum Junction-to-Ambient

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain or Source

Current (V

Pulsed Drain Current

Power Dissipation

Schottky and Body Diode

Average ForwardCurrent

Junction & Storage Temperature Range

and Schottky Diode

Converters up to 5A Output

™

family of Co-Pack HEXFET

4.5V)

25°C

70°C

25°C

70°C

25°C

MOSFETs

Symbol

, T

(AV)

FETKY™ MOSFET / SCHOTTKY DIODE

STG

SO-8

Device Features (Max Values)

–55 to 150

Max.

±12

8.3

6.6

2.5

1.6

3.7

2.3

oss

IRF7807D2

(on)

A/S

IRF7807D2

25m

5.2nC

21.6nC

14nC

30V

Top View

PD- 93762

Units

°C/W

°C

K/D

11/8/99

Related parts for IRF7807D2TR

IRF7807D2TR Summary of contents

Page 1

... HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. ...

Page 2

IRF7807D2 Electrical Characteristics Parameter Drain-to-Source V (BR)DSS Breakdown Voltage* Static Drain-Source R (on Resistance* Gate Threshold Voltage* V (th) GS Drain-Source Leakage I DSS Current* Gate-Source Leakage I GSS Current* Total Gate Charge Q gsync Synch FET* Total ...

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IRF7807D2TR International Rectifier, IRF7807D2TR Datasheet

IRF7807D2TR

Specifications of IRF7807D2TR

Available stocks

Related parts for IRF7807D2TR

IRF7807D2TR Summary of contents

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