IRF520 STMicroelectronics, IRF520 Datasheet

MOSFET N-CH 100V 10A TO-220

IRF520

Manufacturer Part Number
IRF520
Description
MOSFET N-CH 100V 10A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of IRF520

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
270 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
460pF @ 25V
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-2782-5

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DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET™ process has specifically been
designed to minimize input capacitance and gate charge.
It is therefore suitable as primary switch in advanced
high-efficiency,
converters for Telecom and Computer applications. It is
also intended for any applications with low gate drive
requirements.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(
August 2002
NEW DATASHEET ACCORDING TO PCN DSG/CT/0C23.
IRF520
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
175
HIGH CURRENT, HIGH SWITCHING SPEED
SOLENOID AND RELAY DRIVERS
REGULATOR
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, etc.)
Pulse width limited by safe operating area.
Symbol
dv/dt
E
I
V
DM
V
V
P
AS
T
DGR
I
I
T
GS
stg
DS
TYPE
D
D
tot
o
(
j
(2)
C OPERATING TEMPERATURE
(1)
LOW GATE CHARGE STripFET™ II POWER MOSFET
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
DS
high-frequency
(on) = 0.115
100 V
V
DSS
Parameter
<0.27
R
DS(on)
C
isolated
GS
N-CHANNEL 100V - 0.115
= 25°C
GS
= 20 k )
= 0)
C
C
10 A
= 25°C
= 100°C
DC-DC
I
D
INTERNAL SCHEMATIC DIAGRAM
(1) I
(2) Starting T
SD
10A, di/dt 300A/µs, V
j
= 25
-55 to 175
o
Value
C, I
± 20
100
100
100
0.4
10
40
60
20
7
D
= 10A, V
TO-220
DD
DD
V
- 10A TO-220
(BR)DSS
= 50V
1
2
, T
3
IRF520
j
T
JMAX
W/°C
V/ns
Unit
mJ
°C
W
V
V
V
A
A
A
1/8

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IRF520 Summary of contents

Page 1

... August 2002 NEW DATASHEET ACCORDING TO PCN DSG/CT/0C23. N-CHANNEL 100V - 0.115 R I DS(on isolated DC-DC INTERNAL SCHEMATIC DIAGRAM = 25° 100° 25°C C (1) I 10A, di/dt 300A/µ (2) Starting T IRF520 - 10A TO-220 TO-220 Value 100 100 ± 0.4 20 100 -55 to 175 (BR)DSS j JMAX ...

Page 2

... IRF520 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter Drain-source V (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current (V GS Gate-body Leakage I GSS Current ( (*) ON Symbol Parameter V Gate Threshold Voltage ...

Page 3

... Test Conditions Min 4 (Resistive Load, Figure 80V I = 10A V = 10V Test Conditions Min 4 (Resistive Load, Figure 3) Test Conditions Min di/dt = 100A/µ 40V T = 150° (see test circuit, Figure 5) Thermal Impedance IRF520 Typ. Max. Unit Typ. Max. Unit Typ. Max. Unit 1 230 3/8 ...

Page 4

... IRF520 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics . Normalized on Resistance vs Temperature Normalized Breakdown Voltage vs Temperature . IRF520 5/8 ...

Page 6

... IRF520 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... IRF520 inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 P011C ...

Page 8

... IRF520 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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