STP5NK40Z STMicroelectronics, STP5NK40Z Datasheet - Page 3

• Manufacturer Part Number: STP5NK40Z
• Description: MOSFET N-CH 400V 3A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP5NK40Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.8 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 305pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3194-5

ELECTRICAL CHARACTERISTICS (T
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
C
V
Symbol
Symbol
Symbol
Symbol
Symbol
I
oss eq.
V
R
V
SDM
(BR)DSS
g
t
t
t
I
I
C
I
SD
GS(th)
DS(on)
C
C
r(Voff)
d(on)
Q
Q
fs
d(off)
RRM
DSS
GSS
I
2. Pulse width limited by safe operating area.
3. C
Q
Q
SD
t
oss
t
t
t
t
iss
rss
rr
gs
gd
c
r
(1)
f
f
g
rr
(1)
V
(2)
DSS
oss eq.
(3)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1
CASE
I
V
V
V
V
V
V
V
V
R
(Resistive Load see, Figure 3)
V
V
V
R
(Resistive Load see, Figure 3)
V
R
(Inductive Load see, Figure 5)
I
I
V
(see test circuit, Figure 5)
D
V
SD
SD
DS
DS
GS
DS
GS
DS
GS
DD
DD
GS
DD
DD
DD
G
G
G
DS
=1 mA, V
=25°C UNLESS OTHERWISE SPECIFIED)
= 4.7
= 4.7
= 4.7
= 3 A, V
= 3 A, di/dt = 100A/µs
= Max Rating
= Max Rating, T
= V
=15 V
= ± 20V
= 10V, I
= 0V, V
= 200 V, I
= 320V, I
= 10V
= 200 V, I
= 320V, I
= 40V, T
= 25V, f = 1 MHz, V
Test Conditions
Test Conditions
Test Conditions
Test Conditions
Test Conditions
GS
,
, I
V
V
I
V
GS
GS
DS
D
D
D
GS
GS
j
GS
D
D
= 1.5 A
D
= 150°C
= 1.5 A
D
= 50µA
= 0
= 0V to 400V
= 0
= 3 A,
= 3A,
= 10 V
= 10 V
= 1.5 A
= 1.5A
= 10V
C
= 125 °C
GS
= 0
Min.
Min.
Min.
Min.
Min.
400
3
oss
when V
Typ.
3.75
1.47
Typ.
Typ.
Typ.
22.5
14.5
Typ.
11.5
11.7
305
145
464
2.2
9.2
2.8
5.8
8.5
7.5
6.4
57
44
11
6
DS
increases from 0 to 80%
Max.
Max.
Max.
Max.
Max.
±10
1.6
4.5
1.8
50
17
12
1
3
Unit
Unit
Unit
Unit
Unit
nC
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
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