IRF634 STMicroelectronics, IRF634 Datasheet - Page 3

• Manufacturer Part Number: IRF634
• Description: MOSFET N-CH 250V 8A TO-220
• Manufacturer: STMicroelectronics
• Series: MESH OVERLAY™r

Specifications of IRF634

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 51.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 770pF @ 25V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF634 - IRF634FP
1
Electrical ratings
Table 1.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3.
Table 2.
Table 3.
Rthj-case Thermal resistance junction-case max
Rthj-amb
Symbol
Symbol
dv/dt
I
V
DM
P
V
V
V
I
T
E
SD
I
DGR
I
I
TOT
AR
ISO
T
T
DS
GS
stg
AS
D
D
j
l
(2)
≤ 8A, di/dt ≤ 300 A/ms, V
(3)
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuos) at T
Drain current (continuos) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Insulation withstand voltage (DC)
Storage temperature
Max. operating junction temperature
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
(starting T
Absolute maximum ratings
Thermal data
Avalanche characteristics
j
= 25°C, I
DD
Parameter
≤ V
Parameter
(BR)DSS
D
C
GS
= I
= 25°C
GS
= 20 kΩ)
AR
, Tj ≤ T
= 0)
, V
C
C
DD
= 25°C
= 100°C
jmax
= 50 V)
TO-220
1.56
IRF634
0.64
32
80
8
5
-
Max value
–65 to 150
Value
62.5
300
300
± 20
250
250
150
8
5
TO-220FP
IRF634FP
Electrical ratings
4.11
2000
32
0.24
8
5
30
(1)
(1)
(1)
°C/W
°C/W
W/°C
Unit
Unit
V/ns
mJ
°C
°C
°C
W
A
V
V
V
A
A
A
V
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