STB8NM60N STMicroelectronics, STB8NM60N Datasheet - Page 6

• Manufacturer Part Number: STB8NM60N
• Description: MOSFET N-CH 600V 7A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB8NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 560pF @ 50V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8771-2

Electrical characteristics
2.1
6/19
Figure 2.
Figure 4.
Figure 6.
Electrical characteristics (curves)
Safe operating area for TO-220,
D²PAK
Safe operating area for DPAK, IPAK Figure 5.
Safe operating area for TO-220FP
Figure 3.
Figure 7.
Thermal impedance for DPAK, IPAK
Thermal impedance for TO-220,
D²PAK
Thermal impedance for TO-220FP
STx8NM60N