BSL307SP Infineon Technologies, BSL307SP Datasheet

MOSFET P-CH 30V 5.5A 6-TSOP

BSL307SP

Manufacturer Part Number
BSL307SP
Description
MOSFET P-CH 30V 5.5A 6-TSOP
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSL307SP

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
43 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.5A
Vgs(th) (max) @ Id
2V @ 40µA
Gate Charge (qg) @ Vgs
29nC @ 10V
Input Capacitance (ciss) @ Vds
805pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
6-TSOP
Package
TSOP-6
Vds (max)
-30.0 V
Rds (on) (max) (@10v)
43.0 mOhm
Rds (on) (max) (@4.5v)
74.0 mOhm
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSL307SPINTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSL307SP
Manufacturer:
Infineon
Quantity:
98 000
Part Number:
BSL307SP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
BSL307SP H6327
Quantity:
4 800
Company:
Part Number:
BSL307SP H6327
Quantity:
4 800
Part Number:
BSL307SP L6327
Manufacturer:
Infineon Technologies
Quantity:
31 450
Part Number:
BSL307SP L6327
Manufacturer:
Infineon
Quantity:
20 000
Part Number:
BSL307SP L6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSL307SPH6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Feature
OptiMOS -P Small-Signal-Transistor
Type
BSL307SP
Maximum Ratings,at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
A
A
A
A
150°C operating temperature
P-Channel
Enhancement mode
Logic Level
Avalanche rated
dv/dt rated
=-5.5A, V
=-5.5 A , V
=25°C
=70°C
=25°C
=25°C
DS
DD
=24V, di/dt=200A/µs, T
=-25V, R
GS
Package
PG-TSOP-6-1 L6327: 3000pcs/r.
=25
j
= 25 °C, unless otherwise specified
jmax
=150°C
Tape and reel
Rev 1.2
Page 1
Symbol
I
I
E
dv/dt
V
P
T
D
D puls
j ,
AS
GS
tot
T
st g
Marking
sPC
-55... +150
55/150/56
Product Summary
V
R
I
D
Value
DS
DS(on)
-5.5
-4.4
±20
-22
44
-6
2
PG-TSOP-6-1
6
5
Gate
pin 3
4
BSL307SP
2007-02-23
-5.5
-30
43
Unit
A
mJ
kV/µs
V
W
°C
Source
pin 4
Drain
pin 1,2,
V
m
A
5,6
3
2
1

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BSL307SP Summary of contents

Page 1

... Power dissipation T =25°C A Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev 1.2 Tape and reel Symbol puls E AS dv/dt =150°C jmax tot Page 1 BSL307SP Product Summary V - DS(on) I -5.5 D PG-TSOP-6 Gate Marking pin 3 sPC Value -5.5 -4.4 - ±20 2 -55 ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air sec. Rev 1.2 Symbol R thJS R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) R DS(on) Page 2 BSL307SP Values Unit min. typ. max K 230 - - 62.5 Values Unit min. typ. max. - ...

Page 3

... DD GS d(on) I =-1A d(off =-24V, I =-5. =-24V, I =-5.5A -10V GS V (plateau) V =-24V, I =-5. =25° = =-15V /dt=100A/µ Page 3 BSL307SP Values Unit min. typ. max. 4.7 9 805 - pF - 234 - - 195 - - 7 8.4 12 -8.2 -12.3 - -23.4 - -22 - -0. 6.2 7.8 nC 2007-02-23 ...

Page 4

... Rev 1.2 2 Drain current parameter -4.5 -3.5 -2.5 -1.5 -0.5 °C 100 120 160 Transient thermal impedance Z thJS parameter : K 90.0µs 100 µ - Page 4 BSL307SP ) BSL307SP - 100 = BSL307SP single pulse - 120 °C 160 0.50 0.20 0.10 0.05 0.02 0. 2007-02-23 ...

Page 5

... Vgs = -4.5V 0.05 0.04 Vgs = -4V 0.03 0.02 Vgs = -3.5V 0.01 Vgs = - Typ. forward transconductance | f(I DS(on)max fs parameter µ Page 0.1 Vgs = -3.5V Vgs = -4.5V Vgs = -4V Vgs Vgs = - 3.5V Vgs = - 4.5V Vgs Vgs = - 10V =25° 7 BSL307SP 2007-02-23 ...

Page 6

... V 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 °C 100 160 - Forward character. of reverse diode parameter -10 A -10 - Page 6 BSL307SP = 98% typ 100 ) µ BSL307SP °C typ 150 °C typ °C (98 150 °C (98 -0.4 -0.8 -1.2 -1.6 -2 2007-02-23 °C 160 ...

Page 7

... Drain-source breakdown voltage (BR)DSS j BSL307SP -36 V -34 -33 -32 -31 -30 -29 -28 -27 -60 - Rev 1.2 14 Typ. gate charge |V GS parameter: I °C 100 150 T j 100 °C 180 T j Page Gate = -5.5 A pulsed 0.2 VDS max. 0.5 VDS max. 0.8 VDS max BSL307SP Gate | 2007-02-23 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 1.2 Page 8 BSL307SP 2007-02-23 ...

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