BSL307SP Infineon Technologies, BSL307SP Datasheet - Page 7

• Manufacturer Part Number: BSL307SP
• Description: MOSFET P-CH 30V 5.5A 6-TSOP
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSL307SP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 43 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 2V @ 40µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 805pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Package: TSOP-6
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 43.0 mOhm
• Rds (on) (max) (@4.5v): 74.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSL307SPINTR

13 Typ. avalanche energy
E
V
15 Drain-source breakdown voltage
V
AS
DD
(BR)DSS
mJ
= f (T
-36
-34
-33
-32
-31
-30
-29
-28
-27
= -25 V, R
V
45
35
30
25
20
15
10
5
0
-60
25
BSL307SP
j
= f (T
), par.: I
-20
50
GS
j
)
20
D
= 25
= -5.5 A
75
60
100
100
°C
°C
T
T
Rev 1.2
j
j
180
150
Page 7
14 Typ. gate charge
|V
parameter: I
GS
| = f (Q
V
18
14
12
10
8
6
4
2
0
0
0.2 VDS max.
0.5 VDS max.
0.8 VDS max.
5
Gate
D
= -5.5 A pulsed
10
)
15
20
BSL307SP
25
2007-02-23
nC
|Q Gate |
35